Semiconductor device with multiple polarity groups
US10861841B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2018 |
| Grant date | Dec 8, 2020 |
| Priority date | — |
| Expiry date | Dec 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1207
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes passive electrical components in a substrate; and an interconnect structure over the passive electrical components, conductive features of the interconnect structure being electrically coupled to the passive electrical components. The conductive features of the interconnect structure includes a first conductive line over the substrate; a conductive bump over the first conductive line, where in a plan view, the conductive bumps has a first elongated shape and is entirely disposed within boundaries of the first conductive line; and a first via between the first conductive line and the conductive bump, the first via electrically connected to the first conductive line and the conductive bump, where in the plan view, the first via has a second elongated shape and is entirely disposed within boundaries of the conductive bump.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.