Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereof

US10868173B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Cedric Ouvrard · Villach, AT
• Adam Amali · Hawthorne, US
• Oliver Blank · Villach, AT
• Michael Hutzler · Villach, AT
• David Laforet · Villach, AT
• Harsh Naik · El Segundo, US
• Ralf Siemieniec · Villach, AT
• Li Juin Yip · Villach, AT

Key dates

• Filing date: Jun 25, 2020
• Grant date: Dec 15, 2020
• Expiry date: Jun 25, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393

Abstract

A semiconductor device includes a semiconductor substrate having drift and body regions. The drift region includes upper and lower drift regions. An active area includes a plurality of spicular trenches extending through the body region and into the drift region. Each spicular trench in the active area has a lower end which together define a lower end of the upper drift region extending towards a first side and a lower drift region extending from the lower end of the upper drift region towards a second side. The edge termination area includes spicular termination trenches extending at least into the upper drift region. A surface doping region arranged in the upper drift region in the edge termination area extends to the first side, is spaced apart from the lower end of the upper drift region, and has a net doping concentration lower than that of the upper drift region.