Patent · US Active

Ferroelectric memory cells

US10872650B2 · kind B2 · utility

7Cited by

46References

18Claims

0Family size

Assignee

Micron Technology, Inc. · US

Inventors

Scott J. Derner · Boise, US
Christopher John Kawamura · Boise, US

Key dates

Filing date	May 29, 2019
Grant date	Dec 22, 2020
Priority date	—
Expiry date	May 29, 2039

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/2257
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Apparatuses and methods are disclosed that include ferroelectric memory cells. An example ferroelectric memory cell includes two transistors and two capacitors. Another example ferroelectric memory cell includes three transistors and two capacitors. Another example ferroelectric memory cell includes four transistors and two capacitors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.