Embedded non-volatile memory device and fabrication method of the same

US10872898B2 · kind B2 · utility

Assignee

• Cypress Semiconductor Corporation · US

Inventors

• Chun Chen · San Jose, US
• James Pak · Sunnyvale, US
• Unsoon Kim · San Jose, US
• Inkuk Kang · San Jose, US
• Sung-Taeg Kang · Austin, US
• Kuo-Tung Chang · Saratoga, US

Key dates

• Filing date: Dec 20, 2017
• Grant date: Dec 22, 2020
• Expiry date: Dec 20, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

Systems and methods of forming such include method, forming a memory gate (MG) stack in a first region, forming a sacrificial polysilicon gate on a high-k dielectric in a second region, wherein the first and second regions are disposed in a single substrate. Then a select gate (SG) may be formed adjacent to the MG stack in the first region of the semiconductor substrate. The sacrificial polysilicon gate may be replaced with a metal gate to form a logic field effect transistor (FET) in the second region. The surfaces of the substrate in the first region and the second region are substantially co-planar.