Using aluminum as etch stop layer
US10873023B2 · kind B2 · utility
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2References
20Claims
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Key dates
| Filing date | Mar 24, 2017 |
| Grant date | Dec 22, 2020 |
| Priority date | — |
| Expiry date | Mar 24, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/841
Abstract
A two-terminal resistive switching device (TTRSD) such as a non-volatile two-terminal memory device or a volatile two-terminal selector device can be formed according to a manufacturing process. The process can include forming an etch stop layer that is made of aluminum and can include forming a buffer layer below the etch stop layer and/or between the etch stop layer and a top electrode of the TTRSD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.