Inventor · San Francisco, CA, US

Natividad Vasquez

23Patents
7h-index
16Co-inventors
62Inventor score

Filing activity: Feb 19, 2009 → Mar 31, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US8946667B1 Barrier structure for a silver based RRAM and method Electricity 24 Active
US9166163B2 Sub-oxide interface layer for two-terminal memory Electricity 23 Active
US9595670B1 Resistive random access memory (RRAM) cell and method for forming the RRAM cell Electricity 17 Active
US9741765B1 Monolithically integrated resistive memory using integrated-circuit foundry compatible processes Electricity 12 Active
US9339630B2 Retractable drug delivery system and method Human Necessities 9 Active
US9412790B1 Scalable RRAM device architecture for a non-volatile memory device and method Electricity 8 Active
US9583701B1 Methods for fabricating resistive memory device switching material using ion implantation Electricity 8 Active
US10319908B2 Integrative resistive memory in backend metal layers Electricity 6 Active
US9425046B1 Method for surface roughness reduction after silicon germanium thin film deposition Electricity 5 Active
US9437814B1 Mitigating damage from a chemical mechanical planarization process Electricity 5 Active
US10062845B1 Flatness of memory cell surfaces Electricity 4 Active
US8716098B1 Selective removal method and structure of silver in resistive switching device for a non-volatile memory device Electricity 4 Active
US10290801B2 Scalable silicon based resistive memory device Electricity 2 Active
US10522754B2 Liner layer for dielectric block layer Electricity 2 Active
US9601690B1 Sub-oxide interface layer for two-terminal memory Electricity 1 Active
US11944020B2 Using aluminum as etch stop layer Electricity 0 Active
US10096653B2 Monolithically integrated resistive memory using integrated-circuit foundry compatible processes Electricity 0 Active
US10873023B2 Using aluminum as etch stop layer Electricity 0 Active
US10115819B2 Recessed high voltage metal oxide semiconductor transistor for RRAM cell Electricity 0 Active
US10749110B1 Memory stack liner comprising dielectric block layer material Electricity 0 Active
US11997932B2 Resistive switching memory having confined filament formation and methods thereof Electricity 0 Active
US12075712B2 Resistive switching memory devices and method(s) for forming the resistive switching memory devices Electricity 0 Active
US10192927B1 Semiconductor device for a non-volatile (NV) resistive memory and array structure for an array of NV resistive memory Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.