PVD deposition and anneal of multi-layer metal-dielectric film
US10879177B2 · kind B2 · utility
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8References
19Claims
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Key dates
| Filing date | Jun 19, 2015 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Jun 25, 2036 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/401
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present disclosure provides a film stack structure formed on a substrate and methods for forming the film stack structure on the substrate. In one embodiment, the method for forming a film stack structure on a substrate includes depositing a first adhesion layer on an oxide layer formed on the substrate and depositing a metal layer on the first adhesion layer, wherein the first adhesion layer and the metal layer form a stress neutral structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.