Method for making a semiconductor device including enhanced contact structures having a superlattice
US10879356B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2019 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Mar 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a semiconductor device may include forming a trench in a semiconductor substrate, and forming a superlattice liner covering bottom and sidewall portions of the trench. The superlattice liner may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming a semiconductor cap layer on the superlattice liner and having a dopant constrained therein by the superlattice liner, and forming a conductive body within the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.