Method and system of reducing charged particle beam write time
US10884395B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2018 |
| Grant date | Jan 5, 2021 |
| Priority date | — |
| Expiry date | Mar 29, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31793
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for exposing a pattern in an area on a surface using a charged particle beam lithography is disclosed and includes inputting an original set of exposure information for the area. A backscatter is calculated for the area of the pattern based on the exposure information. An artificial background dose is determined for the area. The artificial background dose comprises additional exposure information and is combined with the original set of exposure information creating a modified set of exposure information. A system for exposing a pattern in an area on a surface using a charged particle beam lithography is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.