Technique to prevent aluminum fluoride build up on the heater
US10892143B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2017 |
| Grant date | Jan 12, 2021 |
| Priority date | — |
| Expiry date | Dec 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3288
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Implementations of the present disclosure provide methods for treating a processing chamber. In one implementation, the method includes purging a 300 mm substrate processing chamber, without the presence of a substrate, by flowing a purging gas into the substrate processing chamber at a flow rate of about 0.14 sccm/mm2 to about 0.33 sccm/mm2 and a chamber pressure of about 1 Torr to about 30 Torr, with a throttle valve of a vacuum pump system of the substrate processing chamber in a fully opened position, wherein the purging gas is chemically reactive with deposition residue on exposed surfaces of the substrate processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.