Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 · kind B2 · utility
2Cited by
1,738References
22Claims
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Key dates
| Filing date | May 8, 2017 |
| Grant date | Jan 12, 2021 |
| Priority date | — |
| Expiry date | May 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a silicon nitride film on a substrate is disclosed. The method may include; forming a cyclical silicon nitride film on the substrate by a cyclical deposition process, wherein the cyclical deposition process comprises at least one of; contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source. The method may also include exposing the cyclical silicon nitride film to a plasma. Semiconductor device structures comprising a silicon nitride film are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.