Interconnects separated by a dielectric region formed using removable sacrificial plugs
US10896874B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2019 |
| Grant date | Jan 19, 2021 |
| Priority date | — |
| Expiry date | Apr 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53295
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures that include interconnects and methods of forming structures that include interconnects. A first interconnect is formed in a first trench in an interlayer dielectric layer, and a second interconnect in a second trench in the interlayer dielectric layer. The second interconnect is aligned along a longitudinal axis with the first interconnect. A dielectric region is arranged laterally arranged between the first interconnect and the second interconnect. The interlayer dielectric layer is composed of a first dielectric material, and the dielectric region is composed of a second dielectric material having a different composition than the first dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.