Oxide-nitride-oxide stack having multiple oxynitride layers
US10896973B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 30, 2018 |
| Grant date | Jan 19, 2021 |
| Priority date | — |
| Expiry date | Sep 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An embodiment of a semiconductor memory device including a multi-layer charge storing layer and methods of forming the same are described. Generally, the device includes a channel formed from a semiconducting material overlying a surface on a substrate connecting a source and a drain of the memory device; a tunnel oxide layer overlying the channel; and a multi-layer charge storing layer including an oxygen-rich, first oxynitride layer on the tunnel oxide layer in which a stoichiometric composition of the first oxynitride layer results in it being substantially trap free, and an oxygen-lean, second oxynitride layer on the first oxynitride layer in which a stoichiometric composition of the second oxynitride layer results in it being trap dense. In one embodiment, the device comprises a non-planar transistor including a gate having multiple surfaces abutting the channel, and the gate comprises the tunnel oxide layer and the multi-layer charge storing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.