Integration of stress decoupling and particle filter on a single wafer or in combination with a waferlevel package

US10899604B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Florian BRANDL · Maxhütte-Haidhof, DE
• Christian Geissler · Teugn, DE
• Robert Gruenberger · Nandlstadt, DE
• Claus Waechter · Sinzing, DE
• Bernhard Winkler · Birkenfeld, DE

Key dates

• Filing date: Apr 18, 2019
• Grant date: Jan 26, 2021
• Expiry date: Apr 18, 2039

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2203/0109
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.