Determining the impacts of stochastic behavior on overlay metrology data
US10901325B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2018 |
| Grant date | Jan 26, 2021 |
| Priority date | — |
| Expiry date | Jan 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/28
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods are provided for designing metrology targets and estimating the uncertainty error of metrology metric values with respect to stochastic noise such as line properties (e.g., line edge roughness, LER). Minimal required dimensions of target elements may be derived from analysis of the line properties and uncertainty error of metrology measurements, by either CDSEM (critical dimension scanning electron microscopy) or optical systems, with corresponding targets. The importance of this analysis is emphasized in view of the finding that stochastic noise may have increased importance with when using more localized models such as CPE (correctables per exposure). The uncertainty error estimation may be used for target design, enhancement of overlay estimation and evaluation of measurement reliability in multiple contexts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.