Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor device

US10903078B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Alexander Breymesser · Villach, AT
• Guenter Denifl · Annenheim, AT
• Mihai Draghici · Villach, AT
• Bernhard Goller · Villach, AT
• Tobias Franz Wolfgang Hoechbauer · Villach, AT
• Wolfgang Lehnert · Lintach, DE
• Roland Rupp · Achern, DE
• Werner Schustereder · Villach, AT

Key dates

• Filing date: May 24, 2019
• Grant date: Jan 26, 2021
• Expiry date: May 24, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76254
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for processing a silicon carbide wafer includes implanting ions into the silicon carbide wafer to form an absorption layer in the silicon carbide wafer. The absorption coefficient of the absorption layer is at least 100 times the absorption coefficient of silicon carbide material of the silicon carbide wafer outside the absorption layer, for light of a target wavelength. The silicon carbide wafer is split along the absorption layer at least by irradiating the silicon carbide wafer with light of the target wavelength to obtain a silicon carbide device wafer and a remaining silicon carbide wafer.