Managing threshold voltage drift based on a temperature-dependent slope of the threshold voltage drift of a memory sub-system
US10908845B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2019 |
| Grant date | Feb 2, 2021 |
| Priority date | — |
| Expiry date | Aug 27, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A data structure is stored that includes a slope value corresponding to each die temperature of a set of die temperatures, where the slop value represents a change of a read voltage level as a function of a write-to-read delay time of a memory sub-system. In response to a read command, a current write-to-read delay time and a current die temperature are determined. Using the data structure, a stored slope value corresponding to the current die temperature is identified. An adjusted read voltage level is determined based at least in part on the stored slope value and the current write-to-read delay time. The read command is executed using the adjusted read voltage level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.