Patent · US Active

Memory circuit

US10910040B2 · kind B2 · utility

1Cited by
2References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 21, 2018
Grant dateFeb 2, 2021
Priority date
Expiry dateApr 25, 2039

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/4097
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory circuit including a plurality of elementary cells arranged in a plurality of arrays, each including a plurality of rows and a plurality of columns, and wherein: the elementary cells having the same coordinates in the different arrays share a same first conductive track; and in each array, the elementary cells of a same row of the array share a same second conductive track and a same third conductive track.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.