Magnetoresistive random access memory (MRAM) device
US10916694B2 · kind B2 · utility
1Cited by
2References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 23, 2019 |
| Grant date | Feb 9, 2021 |
| Priority date | — |
| Expiry date | Apr 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N35/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first ultra low-k (ULK) dielectric layer on the first MTJ; performing a first etching process to remove part of the first ULK dielectric layer and forming a damaged layer on the first ULK dielectric layer; and forming a second ULK dielectric layer on the damaged layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.