Patent · US Active

Compositions and methods for selectively etching titanium nitride

US10920141B2 · kind B2 · utility

1Cited by
79References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 6, 2014
Grant dateFeb 16, 2021
Priority date
Expiry dateJun 6, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/31144
  • WIPO fieldBasic materials chemistry
  • WIPO sectorChemistry

Abstract

Compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., cobalt, ruthenium and copper, and insulating materials from a microelectronic device having same thereon. The removal compositions contain at least one oxidant and one etchant, may contain various corrosion inhibitors to ensure selectivity.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.