Epitaxial metal oxide as buffer for epitaxial III-V layers
US10923345B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Mar 16, 2017 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Sep 3, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Systems and methods are described herein for growing epitaxial metal oxide as buffer for epitaxial III-V layers. A layer structure includes a base layer and a first rare earth oxide layer epitaxially grown over the base layer. The first rare earth oxide layer includes a first rare earth element and oxygen, and has a bixbyite crystal structure. The layer structure also includes a metal oxide layer epitaxially grown directly over the first rare earth oxide layer. The metal oxide layer includes a first cation element selected from Group III and oxygen, and has a bixbyite crystal structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.