High electron mobility transistors having improved contact spacing and/or improved contact vias
US10923585B2 · kind B2 · utility
4Cited by
26References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2019 |
| Grant date | Feb 16, 2021 |
| Priority date | — |
| Expiry date | Jun 13, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high electron mobility transistor (HEMT) includes a substrate comprising a first surface and a second surface on opposing sides of the substrate, a channel layer on the first surface of the substrate opposite the substrate, a barrier layer on the channel layer, a source contact comprising a first ohmic contact on an upper surface of the barrier layer, and a via extending from the second surface of the substrate to the first ohmic contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.