Method and system for three-dimensional (3D) structure fill
US10943779B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2016 |
| Grant date | Mar 9, 2021 |
| Priority date | — |
| Expiry date | Feb 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments include methods and systems of 3D structure fill. In one embodiment, a method of filling a trench in a wafer includes performing directional plasma treatment with an ion beam at an angle with respect to a sidewall of the trench to form a treated portion of the sidewall and an untreated bottom of the trench. A material is deposited in the trench. The deposition rate of the material on the treated portion of the sidewall is different than a second deposition rate on the untreated bottom of the trench. In one embodiment, a method includes depositing a material on the wafer, filling a bottom of the trench and forming a layer on a sidewall of the trench and a top surface adjacent to the trench. The method includes etching the layer with an ion beam at an angle with respect to the sidewall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.