Diamond-like carbon as mandrel
US10954129B2 · kind B2 · utility
3Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 7, 2018 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Jun 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor structure is described. The method comprises forming at least one mandrel on a substrate, the at least one mandrel comprising a diamond-like carbon and having a top and two opposing sidewalls, the diamond-like carbon comprising at least 40% sp3 hybridized carbon atoms. The mandrel may be used in Self-Aligned Multiple Patterning (SAMP) processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.