NAND string pre-charge during programming by injecting holes via substrate
US10957394B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2020 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Feb 10, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/3459
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Apparatuses and techniques are described for pre-charging NAND string channels in a pre-charge phase of a program operation. In one aspect, a hole-type pre-charge process is used at the source end of a NAND string, where a bottom of the NAND string is connected to a p-well of a substrate. By applying a positive voltage to the p-well and a lower voltage, such as 0 V or a negative voltage, to the source-side select gate transistors and the memory cells, the holes from the p-well are injected into the channel In another approach, the hole-type pre-charge process and an electron-type pre-charge process are used sequentially in separate time periods. In another approach, the hole-type pre-charge process is used at the source end of a NAND string while the electron-type pre-charge process is used at the drain end of the NAND string.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.