Non-volatile memory device and control method

US10957408B1 · kind B1 · utility

Assignee

• YANGTZE MEMORY TECHNOLOGIES CO., LTD. · CN

Inventors

• Jianquan Jia · 红钢城街道, CN
• Kaikai You · 红钢城街道, CN
• Ying Cui · 红钢城街道, CN
• Kaiwei Li · 红钢城街道, CN
• Yali Song · 红钢城街道, CN
• Shan Li · 红钢城街道, CN
• An Zhang · Kunshan, CN

Key dates

• Filing date: Dec 18, 2019
• Grant date: Mar 23, 2021
• Expiry date: Dec 18, 2039

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C16/24
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

A non-volatile memory device is disclosed. The non-volatile memory device includes a memory array, a plurality of word lines, a plurality of dummy word lines, a first control circuit and a second control circuit. The plurality of word lines are connected to a plurality of top memory cells and bottom memory cells of a memory string of the memory array. The plurality of dummy word lines are connected to a plurality of dummy memory cells connected between the plurality of top memory cells and bottom memory cells. The first control circuit is configured to apply a bit line pre-pulse signal to the bit line during a pre-charge period. The second control circuit is configured to apply a selected word line signal to a selected word line, apply an unselected word line signal to unselected word lines and apply a negative pre-pulse signal to the plurality of dummy word lines.