Methods for etching a structure for semiconductor applications
US10957533B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2019 |
| Grant date | Mar 23, 2021 |
| Priority date | — |
| Expiry date | Oct 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67253
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure provide methods and apparatus for forming and patterning features in a film stack disposed on a substrate. In one embodiment, a method for patterning a conductive layer on a substrate includes supplying a gas mixture comprising a chlorine containing gas at a first flow rate to etch a first conductive layer disposed on the substrate, lowing the chlorine containing gas in the first gas mixture to a second flow rate lower than the first flow rate to continue etching the first conductive layer, and increasing the chlorine containing gas in the first gas mixture to a third flow rate greater than the second flow rate to remove the first conductive layer from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.