Method for forming a layer

US10957590B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Wenhui Wang · Clifton Park, US
• Huixiong Dai · San Jose, US
• Christopher S. Ngai · Burlingame, US
• Liqi Wu · San Jose, US
• Wenyu Zhang · San Jose, US
• Yongmei Chen · 丈亭镇, CN
• Hao Chen · Ann Arbor, US
• Keith Tatseun Wong · Los Gatos, US
• Ke-Hao Chang · Taoyuan, TW

Key dates

• Filing date: Oct 30, 2019
• Grant date: Mar 23, 2021
• Expiry date: Oct 30, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/535
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Implementations of the present disclosure generally relate to the fabrication of integrated circuits, and more particularly, to methods for forming a layer. The layer may be a mask used in lithography process to pattern and form a trench. The mask is formed over a substrate having at least two distinct materials by a selective deposition process. The edges of the mask are disposed on an intermediate layer formed on at least one of the two distinct materials. The method includes removing the intermediate layer to form a gap between edges of the mask and the substrate and filling the gap with a different material than the mask or with the same material as the mask. By filling the gap with the same or different material as the mask, electrical paths are improved.