Silicon carbide device with an implantation tail compensation region

US10957768B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Michael Hell · Erlangen, DE
• Rudolf Elpelt · Erlangen, DE
• Caspar Leendertz · Munich, DE
• Dethard Peters · Edenkoben, DE

Key dates

• Filing date: Oct 7, 2019
• Grant date: Mar 23, 2021
• Expiry date: Oct 7, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

A SiC substrate of a semiconductor device includes: a drift region of a first conductivity type; a body region of a second conductivity type having a channel region which adjoins a first surface of the SiC substrate; a source region of the first conductivity type adjoining a first end of the channel region; an extension region of the first conductivity type at an opposite side of the body region as the source region and vertically extending to the drift region; a buried region of the second conductivity type below the body region and having a tail which extends toward the first surface and adjoins the extension region; and a compensation region of the first conductivity type protruding from the extension region into the body region along the first surface and terminating at a second end of the channel region opposite the first end.