Michael Hell
13Patents
1h-index
19Co-inventors
43Inventor score
Filing activity: May 6, 2019 → Sep 6, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11367775B1 | Shielding structure for SiC devices | Electricity | 2 | Active |
| US11552173B2 | Silicon carbide device with trench gate | Emerging Cross-Sectional Technologies | 1 | Active |
| US11552170B2 | Semiconductor device including current spread region | Electricity | 1 | Active |
| US10957768B1 | Silicon carbide device with an implantation tail compensation region | Electricity | 1 | Active |
| US11888032B2 | Method of producing a silicon carbide device with a trench gate | Emerging Cross-Sectional Technologies | 0 | Active |
| US12176396B2 | Semiconductor device including current spread region | Electricity | 0 | Active |
| US11908694B2 | Ion beam implantation method and semiconductor device | Electricity | 0 | Active |
| US12266694B2 | Silicon carbide device with a stripe-shaped trench gate structure | Emerging Cross-Sectional Technologies | 0 | Active |
| US12294018B2 | Vertical power semiconductor device including silicon carbide (sic) semiconductor body | Electricity | 0 | Active |
| US11626477B2 | Silicon carbide field-effect transistor including shielding areas | Electricity | 0 | Active |
| US12119377B2 | SiC devices with shielding structure | Electricity | 0 | Active |
| US11757031B2 | Power transistor with integrated Schottky diode | Electricity | 0 | Active |
| US11101343B2 | Silicon carbide field-effect transistor including shielding areas | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.