Multi-layer encapsulation to enable endpoint-based process control for embedded memory fabrication

US10957850B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Ashim Dutta · Clifton Park, US
• Isabel Cristina Chu · Mount Vernon, US
• Son V. Nguyen · Irvine, US
• Michael Rizzolo · Delmar, US
• John C. Arnold · North Chatham, US

Key dates

• Filing date: Oct 4, 2018
• Grant date: Mar 23, 2021
• Expiry date: Oct 4, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/85

Abstract

A method for fabricating a semiconductor device includes forming a first encapsulation layer along the device, including forming the first encapsulation layer along a memory device region associated with a memory device, forming an intermediate layer on the first encapsulation layer to enable etch endpoint detection and endpoint-based process control for encapsulation layer etch back, and forming a second encapsulation layer on the intermediate layer.