Formation of a capacitor using a sacrificial layer
US10964475B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2019 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Feb 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/005
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods, apparatuses, and systems related to forming a capacitor using a sacrificial material are described. An example method includes forming a first silicate material on a substrate. The method further includes forming a first nitride material on the first silicate material. The method further includes forming a second silicate material on the first nitride material. The method further includes forming a second nitride material on the second silicate material. The method further includes forming a sacrificial material on the second nitride material. The method further includes forming a column of capacitor material through the first silicate material, the first nitride material, the second silicate material, the second nitride material, and the sacrificial material. The method further includes removing the sacrificial material to expose a top portion of the capacitor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.