Residual removal
US10964527B2 · kind B2 · utility
0Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 2019 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | May 2, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for removing residuals after a selective deposition process are provided. In one embodiment, the method includes performing a selective deposition process to form a metal containing dielectric material at a first location of a substrate and performing a residual removal process to remove residuals from a second location of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.