Integration of materials removal and surface treatment in semiconductor device fabrication

US10964528B2 · kind B2 · utility

Assignees

• Mattson Technology, Inc. · US
• Beijing E-Town Semiconductor Technology Co., Ltd. · CN

Inventors

• Michael X. Yang · Palo Alto, US
• Hua Chung · San Jose, US
• Xinliang Lu · Fremont, US
• Haochen Li · Fremont, US
• Ting Xie · Burtonsville, US
• Qi Zhang · State College, US

Key dates

• Filing date: Jul 25, 2019
• Grant date: Mar 30, 2021
• Expiry date: Jul 25, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67069
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Processes for surface treatment of a workpiece are provided. In one example implementation, organic radicals (e.g., methyl CH3 radicals) can be generated by exciting and/or dissociating hydrogen and/or inert gas (e.g., Ar, He, etc) molecules in a remote plasma source and a subsequent reaction with organic molecule (alkanes and alkenes). The organic radicals (e.g., methyl CH3 radicals) can be exposed to the silicon and/or silicon germanium surfaces. After exposure to the organic radicals, the silicon and/or silicon germanium surfaces can be stable in air for a time period (e.g., days) with reduced surface oxidation such that the silicon and/or silicon germanium surfaces can be effectively protected from oxidation. As such, native surface oxide removal process before subsequent process steps can be eliminated.