Formation of an atomic layer of germanium in an opening of a substrate material having a high aspect ratio
US10964536B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Feb 6, 2019 |
| Grant date | Mar 30, 2021 |
| Priority date | — |
| Expiry date | Feb 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/665
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods, apparatuses, and systems related to formation of an atomic layer of germanium (Ge) on a substrate material are described. An example method includes introducing, into a semiconductor processing chamber housing a substrate material having a high aspect ratio, a reducing agent, and introducing, into the semiconductor processing chamber, a germanium amidinate precursor. The example method further includes forming an atomic layer of germanium on the substrate material resulting from a reaction of the reducing agent and the germanium amidinate precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.