Patent · US Active

Semiconductor device comprising a composite material clip

US10971457B2 · kind B2 · utility

1Cited by

9References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Bemmerl · Schwandorf, DE
Martin Gruber · Schwandorf, DE
Thorsten Scharf · Regensburg, DE

Key dates

Filing date	Apr 12, 2019
Grant date	Apr 6, 2021
Priority date	—
Expiry date	Apr 12, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device is disclosed. In one example, the semiconductor device comprises a first semiconductor die comprising a first surface, a second surface opposite to the first surface, and a contact pad disposed on the first surface, a further contact pad spaced apart from the semiconductor die, a clip comprising a first layer of a first metallic material and a second layer of a second metallic material different from the first metallic material, wherein the first layer of the clip is connected with the contact pad, and the second layer of the clip is connected with the further contact pad.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.