Epitaxial structures of a semiconductor device having a wide gate pitch

US10971625B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Michael V. Aquilino · Wappingers Falls, US
• Daniel Jaeger · Saratoga Springs, US
• Man Gu · Malta, US
• Bradley Morgenfeld · Greenfield Center, US
• Haiting Wang · Clifton Park, US
• KAVYA SREE DUGGIMPUDI · Clifton Park, US
• Wang Zheng · Ballston Lake, US

Key dates

• Filing date: Jun 30, 2019
• Grant date: Apr 6, 2021
• Expiry date: Jun 30, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0135

Abstract

A semiconductor device is provided, which includes an array of active regions, gate stacks and substantially uniform epitaxial structures. The gate stacks of the array include a first gate stack and a second gate stack over an active region. An active pillar between the first gate stack and the second gate stack, and the active pillar separating two substantially uniform epitaxial structures. A contact structure over the active pillar, positioned equidistant from the first gate stack and the second gate stack.