Interconnect with self-forming wrap-all-around barrier layer

US10978342B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Huai Huang · Clifton Park, US
• Takeshi Nogami · Schenectady, US
• Alfred Grill · White Plains, US
• Benjamin D. Briggs · Cohoes, US
• Nicholas Anthony Lanzillo · Wynantskill, US
• Christian Lavoie · Ossining, US
• Devika Sil · Rensselaer, US
• Prasad Bhosale · Slingerlands, US
• James J. Kelly · Schenectady, US

Key dates

• Filing date: Jan 30, 2019
• Grant date: Apr 13, 2021
• Expiry date: Jan 30, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/5329
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention provides interconnects with self-forming wrap-all-around graphene barrier layer. In one aspect, a method of forming an interconnect structure is provided. The method includes: patterning at least one trench in a dielectric; forming an interconnect in the at least one trench embedded in the dielectric; and forming a wrap-all-around graphene barrier surrounding the interconnect. An interconnect structure having a wrap-all-around graphene barrier is also provided.