Efficient metal-insulator-metal capacitor
US10978550B2 · kind B2 · utility
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21References
17Claims
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Key dates
| Filing date | May 11, 2020 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | May 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
Abstract
A capacitor includes a stack. The stack has a first metallic layer formed over a substrate, an insulator formed over the first metallic layer, and a second metallic layer formed over the insulator. The first metallic layer has at least one high domain and at least one low domain, where a surface of the substrate in the at least one low domain has a height that is lower than a surface of the substrate in the at least one high domain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.