Patent · US Active

Efficient metal-insulator-metal capacitor

US10978550B2 · kind B2 · utility

0Cited by
21References
17Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 11, 2020
Grant dateApr 13, 2021
Priority date
Expiry dateMay 11, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D1/692

Abstract

A capacitor includes a stack. The stack has a first metallic layer formed over a substrate, an insulator formed over the first metallic layer, and a second metallic layer formed over the insulator. The first metallic layer has at least one high domain and at least one low domain, where a surface of the substrate in the at least one low domain has a height that is lower than a surface of the substrate in the at least one high domain.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.