In-situ tungsten deposition without barrier layer

US10991586B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Yong Wu · Sunnyvale, US
• Wei V. Tang · Santa Clara, US
• Jianqiu GUO · San Jose, US
• Wenyi Liu · Foshan, CN
• Yixiong Yang · San Jose, US
• Jacqueline S. Wrench · San Jose, US
• Mandyam Sriram · Beaverton, US
• Srinivas Gandikota · Santa Clara, US
• Yumin He · Santa Clara, US

Key dates

• Filing date: Mar 30, 2020
• Grant date: Apr 27, 2021
• Expiry date: Mar 30, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02579
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.