Source/drain contact depth control

US10991796B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Lin Hu · Livingston, US
• Veeraraghavan S. Basker · Schenectady, US
• Brian J. Greene · Wappingers Falls, US
• Kai Zhao · Willowbrook, US
• Daniel Jaeger · Saratoga Springs, US
• Keith H. Tabakman · Newburgh, US
• Christopher Nassar · Ballston Spa, US

Key dates

• Filing date: Dec 24, 2018
• Grant date: Apr 27, 2021
• Expiry date: Dec 24, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0149

Abstract

A dielectric fill layer within source/drain metallization trenches limits the depth of an inlaid metallization layer over isolation regions of a semiconductor device. The modified geometry decreases parasitic capacitance as well as the propensity for electrical short circuits between the source/drain metallization and adjacent conductive structures, which improves device reliability and performance.