Systems and methods of control for plasma processing
US10998169B2 · kind B2 · utility
40Cited by
9References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 17, 2018 |
| Grant date | May 4, 2021 |
| Priority date | — |
| Expiry date | Dec 17, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of plasma processing includes generating a first sequence of source power pulses, generating a second sequence of bias power pulses, combining the bias power pulses of the second sequence with the source power pulses of the first sequence to form a combined sequence of alternating source power pulses and bias power pulses, and, using the combined sequence, generating a plasma comprising ions and processing a substrate by delivering the ions to a major surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.