Method for monitoring gas in wafer processing system
US11004709B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2018 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Sep 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67011
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for monitoring gas in a wafer processing system is provided. The method includes producing an exhaust flow in an exhausting conduit from a processing chamber. The method further includes placing a gas sensor in fluid communication with a detection point located in the exhausting conduit via a sampling tube that passes through a through hole formed on the exhausting conduit. The detection point is located away from the through hole. The method also includes detecting a gas condition at the detection point with the gas sensor. In addition, the method also includes analyzing the gas condition detected by the gas sensor to determine if the gas condition in the exhausting conduit is in a range of values.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.