Magnetoresistive random access memory with particular shape of dielectric layer
US11018184B2 · kind B2 · utility
1Cited by
3References
11Claims
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Key dates
| Filing date | Aug 6, 2019 |
| Grant date | May 25, 2021 |
| Priority date | — |
| Expiry date | Aug 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive random access memory (MRAM), including multiple cell array regions, multiple MRAM cells disposed in the cell array region, a silicon nitride liner conformally covering on the MRAM cells, an atomic layer deposition dielectric layer covering on the silicon nitride liner in the cell array region, wherein the surface of atomic layer deposition dielectric layer is a curved surface concave downward to the silicon nitride liner at the boundary of MRAM cells, and an ultra low-k dielectric layer covering on the atomic layer deposition dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.