Air gap regions of a semiconductor device
US11018221B2 · kind B2 · utility
1Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 12, 2019 |
| Grant date | May 25, 2021 |
| Priority date | — |
| Expiry date | Aug 12, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device is provided, which includes an active region, a first structure, a second gate structure, a first gate dielectric sidewall, a second gate dielectric sidewall, a first air gap region, a second air gap region and a contact structure. The active region is formed over a substrate. The first and second gate structures are formed over the active region and between the first gate structure and the second gate structure are the first gate dielectric sidewall, the first air gap region, the contact structure, the second air gap region and a second gate dielectric sidewall.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.