Contact interlayer dielectric replacement with improved SAC cap retention
US11024536B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2019 |
| Grant date | Jun 1, 2021 |
| Priority date | — |
| Expiry date | Apr 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76897
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention are directed to reducing the effective capacitance between active devices at the contact level. In a non-limiting embodiment of the invention, an interlayer dielectric is replaced with a low-k material without damaging a self-aligned contact (SAC) cap. A gate can be formed over a channel region of a fin. The gate can include a gate spacer and a SAC cap. Source and drain regions can be formed adjacent to the channel region. A contact is formed on the SAC cap and on surfaces of the source and drain regions. A first dielectric layer can be recessed to expose a sidewall of the contact and a sidewall of the gate spacer. A second dielectric layer can be formed on the recessed surface of the first dielectric layer. The second dielectric layer can include a dielectric material having a dielectric constant less than the first dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.