Etching composition, method for etching insulating layer of semiconductor devices and method for preparing semiconductor devices
US11028321B2 · kind B2 · utility
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Key dates
| Filing date | Oct 7, 2019 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Oct 7, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F1/10
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An etching composition is provided. The etching composition includes phosphoric acid, phosphoric anhydride, a silane compound represented by Formula 1 below and water:
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.