Semiconductor structures of more uniform thickness
US11031250B2 · kind B2 · utility
1Cited by
7References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 29, 2018 |
| Grant date | Jun 8, 2021 |
| Priority date | — |
| Expiry date | Nov 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and method of formation thereof. The semiconductor device includes a portion of a first material that abuts a portion of a second material and surrounds at least a portion of a semiconductor component. The first material has a first composition and a first index of refraction and is of a same type of material as the second material. The second material has a second composition and a second index of refraction. An opening in the first material exposes a portion of the semiconductor component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.