Patent · US Active

In-situ integrated chambers

US11037838B2 · kind B2 · utility

0Cited by
13References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 3, 2019
Grant dateJun 15, 2021
Priority date
Expiry dateSep 3, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/038
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The systems and methods discussed herein are for a cluster tool that can be used for MOSFET device fabrication, including NMOS and PMOS devices. The cluster tool includes process chambers for pre-cleaning, metal-silicide or metal-germanide film formation, and surface protection operations such as capping and nitridation. The cluster tool can include one or more process chambers configured to form a source and a drain. The devices fabricated in the cluster tool are fabricated to have at least one protective layer formed over the metal-silicide or metal-germanide film to protect the film from contamination during handling and transfer to separate systems.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.