In-situ integrated chambers
US11037838B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2019 |
| Grant date | Jun 15, 2021 |
| Priority date | — |
| Expiry date | Sep 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The systems and methods discussed herein are for a cluster tool that can be used for MOSFET device fabrication, including NMOS and PMOS devices. The cluster tool includes process chambers for pre-cleaning, metal-silicide or metal-germanide film formation, and surface protection operations such as capping and nitridation. The cluster tool can include one or more process chambers configured to form a source and a drain. The devices fabricated in the cluster tool are fabricated to have at least one protective layer formed over the metal-silicide or metal-germanide film to protect the film from contamination during handling and transfer to separate systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.