Plasma deposition of carbon hardmask
US11043375B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2018 |
| Grant date | Jun 22, 2021 |
| Priority date | — |
| Expiry date | Aug 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a transparent carbon layer on a substrate is provided. The method comprises generating an electron beam plasma above a surface of a substrate positioned over a first electrode and disposed in a processing chamber having a second electrode positioned above the first electrode. The method further comprises flowing a hydrocarbon-containing gas mixture into the processing chamber, wherein the second electrode has a surface containing a secondary electron emission material selected from a silicon-containing material and a carbon-containing material. The method further comprises applying a first RF power to at least one of the first electrode and the second electrode and forming a transparent carbon layer on the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.